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MagyarTSMC is no savior for Qualcomm either: Snapdragon 8+ Gen 1 in the OnePlus 10T put to the test
It's no secret that the high performance of Qualcomm's Snapdragon 8 Gen 1 is accompanied by high waste heat. This can be seen from the very strong heat development in certain reviews (Oppo Find X5, Xiaomi 12, Motorola Edge 30 Pro), particularly in benchmark tests where both the CPU and GPU units of the SOC are placed under heavy stress. Ultimately, this waste heat problem leads to strong drops in performance, leading to pronounced instability in the 3DMark stress tests.
This phenomenon may have been partly due to dynamics in Samsung's production process, but our review of the OnePlus 10T reveals that the Snapdragon 8+ Gen 1 has not fundamentally solved the problem of heat development. The hope in TSMC and its 4nm process has somewhat fizzled out, at least in the OnePlus 10T. Although the OnePlus phone has a new Cryo Velocity Vapor cooling system and a more efficient SoC in the form of the Snapdragon 8+ Gen 1, we measured a higher surface temperature of almost 47 °C than in the 10 Pro. This level of waste heat also becomes a problem in terms of system stability because voltage- and overheating protection measures often kick in.
Power Consumption: Geekbench (150 cd/m²)
In terms of efficiency, however, our measurements show that the OnePlus 10T consumes less power than smartphones with the Snapdragon 8 Gen 1. Especially under load, the peak power consumption of less than 6 watts is significantly lower than that of a 10 Pro, which consumes more than 11 watts. However, the improved efficiency only seems to apply to the the Cryo CPU unit, as indicated by a comparison of GeekBench and GFXBench (at a brightness of 150 cd/m²) values.
Power Consumption: GFX Bench (150 cd/m²)
All measurements, gaming tests and benchmark results can be found in our detailed review of the OnePlus 10T.
Source(s)
Review of the OnePlus 10T
