Samsung develops industry's first GDDR7 DRAM with 1.5 TBps bandwidth

After showing it for the first time last month, Samsung has now announced that the development stage of the first GDDR7 DRAM solution in the industry is complete. This new high-speed memory solution from Samsung comes after last year's industry first 24 Gbps GDDR6 DRAM.

According to Samsung Electronics' Yongcheol Bae, Executive Vice President of the company's Memory Product Planning Team, "Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphics performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles." 

The technical highlights of this new memory chip include a 1.4 times higher bandwidth than GDDR6 (1.5 TBps vs. 1.1 TBps), a maximum boosted speed per pin of 32 Gbps, as well as a solid improvement of 20% in energy efficiency. In addition to these, the use of an epoxy molding compound for the packaging material which, alongside the IC architecture optimization of these new memory chips, reduce thermal resistance by a massive 70% compared to GDDR6.

First hardware products to use Samsung's new GDDR7 DRAM might hit the market in late 2023, if everything goes as planned. More information about this should surface in the coming months directly from Samsung's various partners involved, so stay tuned. 

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