Samsung announces 36 Gbps GDDR7 memory standard, aims to release V-NAND storage solutions with 1000 layers by 2030

Samsung presented a new wave of memory solutions and future plans to exponentially improve performance for data center, server, mobile, gaming and automotive markets. Memory highlights for this year’s Samsung Tech Day include improved capacities for DDR5 RAM, the announcement of the next gen GDDR standard and a future vision for V-NAND storage technology.

For the DRAM market, Samsung is accelerating the 1b production process that allows scaling beyond 10 nm thanks to technologies like High-K. The company will soon introduce DDR5 densities of 32 Gb per memory chip, which is a 2x increase over existing 16 Gb and 33% over 24 Gb chips. Furthermore, the 8.5 Gbps LPDDR5X DRAM solutions for mobile phones and ultrabooks are also expected to see increased adoption throughout the coming year. Tailored DRAM solutions such as HBM-PIM, AXDIMM, and CXL will further be developed to enable accelerated processing for AI and neural network applications.

Next gen GPUs will benefit from faster RAM, as the South Korean giant announced the GDDR7 specs with transfer rates of up to 36 Gbps. This new standard should improve speeds by 50% compared to current 24 Gbps GDDR6X chips from Micron offered by some Nvidia RTX 4000 cards. With a 384-bit bus, GDDR7 can theoretically provide a 1.7 TB/s bandwidth, but a 256-bit bus can still break the 1 TB/s limit, as well.

Last, but not least, Samsung talked about improvement for the V-NAND storage memory chips. 1 Tb TLC V-NAND chips will be available in late 2022, and development for the ninth generation V-NAND is already underway, with the first chips slated for 2024 production. Samsung aims to release a 1000-layer V-NAND solution by 2030.

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