Qualcomm Snapdragon 660 vs UNISOC T610

Qualcomm Snapdragon 660

The Qualcomm Snapdragon 660 (SD660) is a fast mid-range ARM-based SoC largely found on Android tablets and smartphones. Announced in mid 2017, the SD660 is the successor to the Snapdragon 625. It features 8 Kryo 260 cores (custom design, 64-Bit capable) that are divided in two clusters. A fast cluster of four cores with up to 2.2 GHz and a power saving efficiency cluster with up to 1.8 GHz. Both clusters can also used together.

In addition to the 8 CPU cores, the SoC integrates a mid range Adreno 512 GPU with a LPDDR4 memory controller (dual-channel 1866 MHz)  and supports Wi-Fi (802.11ac + MIMO, max. 867 Mbps), Bluetooth 5, and LTE (X12 LTE modem with up to 600 Mbps download and 150 Mbps upload).

Performance

In Benchmarks of the Oppo R11, the CPU part of the Snapdragon SD660 performs between former high end Socs like the Snapdragon 821 in the Pixel XL and the Snapdragon 835. The graphics performance is however much lower, as the Adreno 512 is only a slight upgrade of the older Adreno 510 (due to the higher clock speed).

CPU

The Snapdragon 660 is based on a similar concept as ARM's big.LITTLE, which combines a low power CPU cluster (2x Kyro clocked at up to 1.8 GHz) and a performance CPU cluster (2x Kyro clocked at up to 2.2 GHz). The clock speed of each cluster can be individually adjusted (but not per core) and the lowest clock speed is 310 MHz (unverified).

Power Consumption

Thanks to the new 14 nm process, the energy efficiency has been improved noticeably compared to its 20 nm predecessors.

UNISOC T610

The Unisoc Tiger T610 (former Spreadtrum) is an entry level octa core SoC with two fast ARM Cortex A75 cores at up to 1.8 GHz and six power efficient ARM Cortex A55 cores at up to 1.8 GHz. The SoC furthermore includes a LTE modem (TDD-LTE, FDD-LTE, TDSCDMA, WCDMA, CDMA, GSM), a LPDDR3-933 / LPDDR4/4X-1600 memory controller, an ARM Mali G52MP2 GPU at 614 MHz and a tri core ISP (24, 8 and 8 MPixels max). The chip is manufactured at TSMC in 12nm FinFET.