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Micron's DDR5 modules hit 9200MT/s using EUV lithography

Micron unveils its 1γ node DDR5 memory with 9200MT/s speeds and improved power efficiency. (Image source: Micron)
Micron unveils its 1γ node DDR5 memory with 9200MT/s speeds and improved power efficiency. (Image source: Micron)
Micron becomes first to ship DDR5 modules built using EUV lithography on its new 1-gamma node. The breakthrough delivers 15 percent faster speeds up to 9200MT/s while cutting power consumption by 20 percent and increasing density by 30 percent.

Micron Technology has just become the first memory maker to ship sample units of DDR5 modules built on its sixth-generation 10nm-class DRAM node, also known as 1γ (1-gamma). For the first time ever, Micron is utilizing EUV (extreme ultraviolet) lithography in its manufacturing process, which brings noteworthy gains in speed, power efficiency, and production yields.

Thanks to this new approach, Micron’s 16 GB DDR5 ICs can reach speeds of up to 9200MT/s. That’s a solid 15 percent performance boost compared to the previous 1β (1-beta) generation, all while lowering power consumption by more than 20 percent. On top of that, the updated production technique provides over 30 percent higher bit density, which could help push down costs once the manufacturing process matures.

”Micron’s expertise in developing proprietary DRAM technologies, combined with our strategic use of EUV lithography, has resulted in a robust portfolio of cutting-edge 1γ-based memory products poised to propel the AI ecosystem forward,” said Scott DeBoer, Micron’s executive vice president and chief technology & products officer.

Micron plans to use the 1γ node across a broad range of future memory solutions, including:

Data center applications: Offering up to 15 percent faster performance along with better energy efficiency to keep power consumption and heat in check.

Mobile devices: LPDDR5X variants will support cutting-edge AI experiences right on your smartphone or tablet.

Automotive systems: LPDDR5X running at up to 9600MT/s will expand capacity, extend product lifespans, and deliver stronger performance.

Both AMD and Intel have already started validating Micron’s new DDR5 lineup. Amit Goel, Corporate VP of Server Platform Solutions Engineering at AMD, highlighted how this collaboration aligns with the company’s efforts to keep refining its EPYC processors and consumer-oriented hardware. Meanwhile, Dr. Dimitrios Ziakas from Intel drew attention to the improved power efficiency and higher density that will benefit server environments and AI-driven PCs.

Currently, Micron produces these 1γ DRAM chips at its facilities in Japan, where the company introduced its first EUV lithography system in 2024. As production ramps up, Micron plans to install additional EUV equipment at its sites in both Japan and Taiwan.

Source(s)

Micron (in English)

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> Expert Reviews and News on Laptops, Smartphones and Tech Innovations > News > News Archive > Newsarchive 2025 02 > Micron's DDR5 modules hit 9200MT/s using EUV lithography
Nathan Ali, 2025-02-26 (Update: 2025-02-28)