Micron is introducing the world’s most advanced DRAM production node named 1β (1-beta) and the company is ready to ship its latest LPDDR5X-8500 qualification samples to select smartphone manufacturers. 1-beta is Micron’s last DUV (deep ultraviolet) node before switching to EUV (extreme ultraviolet) lithography, plus it enables a significant boost in performance, bit density and power efficiency, allowing the LPDDR5X-8500 memory modules to deliver top transfer speeds of 8.5 Gbps.
Compared to the 1α (1-alpha) process node introduced back in 2021, the 1-beta improves power efficiency by 15%, while the bit density is increased by 35% as the per die capacity is now upped to 16 Gb. The new node also features second gen high-K metal gate circuitry, which helps reduce power requirements and improves battery life. This is also reflected with the raised frequency threshold of up to 3200 Mb/s for eDVFSC voltage controls. Even though 1-beta is still using 10 nm lithography, Micron managed to refine and reduce the DRAM cell structure thanks to advanced multi-pattern techniques.
In 2023, Micron plans to move most of its portfolio on the new 1-beta nodes, including VRAM for GPUs, high-bandwidth memory for servers, as well as storage and other products for embedded, data center, client, industrial and automotive markets.
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via Tom's Hardware
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