UFS 3.0 benchmark results show up online and they look impressive
This year promises to be very interesting for the mobile industry since at least three major changes are expected to hit the masses: 5G connectivity, foldable designs, and UFS 3.0 storage. Since mass production of UFS 3.0 memory chips is supposed to begin one of these days, seeing what seems to be a benchmark of such a memory solution has just surfaced online is far from surprising.
Well-known Chinese leakster Ice universe has recently posted an image that shows the Results screen of the AndroBench storage benchmark and only accompanied it with a short message that reads "UFS3.0 Crazzzzzy!" and nothing more. Those who are looking for numbers should take a closer look at these figures:
- sequential read 2,279.8 MB/s
- sequential write 1,801.8 MB/s
- random read 146.4 MB/s
- random read (4K) 37,240.3 IOPS
- random write 137.5 MB/s
- random write (4K) 34,962.27 IOPS
Without any more numbers, it is enough to add that the UFS 2.1-compliant memory chips that can be found inside today's handsets are more than two times slower than the benchmark results mentioned above. While nothing is official yet, some of the recent rumors claim that the upcoming Samsung Galaxy S10 (or at least some of its versions) and the next-gen OnePlus flagship will use UFS 3.0 storage.
Foldable designs and 5G connectivity aside, UFS 3.0 storage is definitely a huge step forward for the mobile industry. Are there any other innovations in the mobile industry that you are eager to see this year? Please don't be shy and let us know what you think in the comments below.
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Source(s)
Ice universe (on Twitter)