Micron Technology is a company that has developed 176-layer NAND memory, which it incorporates into products such as DRAM and PCIe 4.0 SSDs. Now, it has announced that it is also ready to ship new UFS 3.1 storage modules with this property.
Its new offerings are intended to be used as the internal storage found in smartphones, and, judging by its specs, might be destined for the high-end models of the near future. Micron asserts that its sequential write and random read speeds are 75% greater compared to its predecessor, and that its general "mixed workload performance" is boosted by 15% compared to the same.
Accordingly, Micron estimates that a phone that integrates this new NAND can download 14 gigabytes' (GB) worth of 4K movie in just 9.6 seconds (s) thanks to ~1.5GB/s sequential write speeds. Furthermore, it might take only 0.7s to download a 10-minute video of the same resolution.
The OEM also claims that the new flash storage imparts a response latency reduced by about 10% generation-on-generation, and will make tasks such as app switching and long-term file storage more effective and reliable over time.
Micron's new UFS 3.1 modules already have at least 1 buyer: Honor has jumped on its bandwagon by integrating it into its Magic3 flagship line. These devices could come with between 128GB and 512GB of its cutting-edge storage, and will launch with them on August 12, 2021.
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