The Galaxy S23 FE is all but confirmed to use an improved version of the Exynos 2200, thanks to a recent Geekbench listing. While rumours about a Snapdragon 8+ Gen 1 variant are still around, there is no evidence to back it up. However, a new Geekbench listing now highlights a second Galaxy S23 FE variant with an entirely different Qualcomm chip. While Geekbench listings are easy to fake, there is sufficient evidence to prove this one is legitimate.
This particular version is codenamed Samsung SM-S711U1. It has shown up on Geekbench with a Qualcomm Snapdragon 8 Gen 1, confirmed by its motherboard (Taro) and the individual cores' clock speeds. Furthermore, it nets single and multi-core scores of 1,594 and 3,718, respectively, putting it on par with other Snapdragon 8 Gen 1-powered smartphones. The Galaxy S23 FE in question has 8 GB of RAM, and that's all that one can infer from this listing.
The "U" in the Galaxy S23 FE's codename implies it could be reserved for the US, although there is a high chance of landing in other markets. This is likely manufactured on Samsung's improved 4 nm process, the same as the Exynos 2200. Meeco tipster Vampire King confirms the aforementioned speculation by stating that existing Exynos 2200 and Snapdragon 8 Gen 1 stocks are exhausted, meaning that Samsung has restarted their manufacturing exclusively for the affordable flagship.