Samsung brings mobile storage one step closer to NVMe speeds with eUFS 3.1
As the largest multi-purpose chip manufacturer in the world, Samsung is constantly pushing for tech advancements in various sectors. The South Korean giant might not have the fastest mobile SoCs or best manufacturing nodes, but when it comes to LPDDR RAM chips, image sensors or storage memory chips, it is always one step ahead of the competition. Speaking of storage memory, Samsung recently announced that it has started production for the eUFS 3.1 chips that will soon be integrated in flagship phones.
UFS 3.0 is already quite fast, but Samsung is now upping the ante with the embedded version that is optimized for 8K videos and large-size image files. While the reading speeds are unchanged at 2.1 GB/s, the improved standard brings three times faster write speeds capping at 1.2 GB/s, so transfer speeds will soon break 1 GB/s and users will be able to move 100 GB of data in around 1.5 minutes. The random read/write speeds have also been improved, with 100,000 IOPS for reads and 70,000 IOPS for writes, which should speed up general responsiveness and load times by up to 60%.
Samsung will offer the eUFS 3.1 chips in 512 GB, 256 GB and 128 GB variants, meaning that the new standard can potentially be featured on mid-range handhelds, as well. For now, the chips are only manufactured at the Xi’an facility in China with 5th gen V-NAND memory, and Samsung plans to expand volume production to its Pyeongtaek facility in South Korea, which will be using 6th gen V-NAND memory.