CXMT leaps ahead: Chinese firm starts HBM2 production two years early

ChangXin Memory Technologies (CXMT), a prominent Chinese memory manufacturer, has reportedly started mass production of its second-generation High Bandwidth Memory (HBM2). As reported by DigiTimes, this development marks a significant milestone for China's semiconductor industry, occurring approximately two years ahead of schedule.

CXMT has procured manufacturing equipment from U.S. and Japanese suppliers, with American companies such as Applied Materials and Lam Research securing necessary export licenses. The production of HBM involves a complex process, encompassing the fabrication and testing of memory devices, base dies, and final assembly.

HBM2 offers superior bandwidth performance, featuring a 1024-bit wide interface and data transfer rates ranging from approximately 2 GT/s to 3.2 GT/s per pin. While its production doesn't necessitate cutting-edge lithography, it does require substantial manufacturing capacity due to the larger size of HBM DRAM integrated circuits compared to standard commodity DRAMs.

The advanced packaging techniques required for HBM production present a significant challenge. The process involves vertically connecting eight or twelve memory devices using small through-silicon vias (TSVs). Despite this complexity, assembling an HBM-like known-good stacked die (KGSD) module is less challenging than manufacturing DRAM devices using a 10nm process technology.

While noteworthy, CXMT's achievement still leaves the company behind global competitors such as Micron, Samsung, and SK Hynix. These industry leaders are currently mass-producing HBM3 and HBM3E memory, with plans to commence HBM4 production featuring 2048-bit interfaces in the near future.

For China's tech industry, domestic HBM2 production represents a crucial advancement. This memory technology is essential for advanced AI and HPC processors, such as Huawei's Ascend 910-series, underscoring its importance in China's pursuit of technological self-sufficiency.