SK Hynix showcases 321-layer 1 Tb TLC NAND memory chips

SK Hynix is displaying the first 321-layer 1 Tb TLC 4D NAND Flash memory chips at the Flash Memory Summit (FMS) 2023 in Santa Clara, USA between August 8 - 10. This advanced type of memory is still in development, but the South Korean company estimates that mass production should start in 1H 2025.

The upcoming fifth generation 4D NAND 321-layer 1 Tb chips bring a series of benefits, including a 59% increased capacity per single chip over the current 238-layer 512 Gb chips, as SK Hynix continues to refine the cell stacking process. In order to fully take advantage of the advanced 321-layer 1 Tb chips, SK Hynix is already developing its next gen PCIe 6.0 and UFS 5.0 solutions, which will be mainly targeted at the generative AI market.

With the 238-layer 512 Gb chips now being produced at full capacity, SK Hynix is also introducing new PCIe 5.0 and UFS 4.0  high-performance and high-capacity  enterprise solutions optimized for AI workloads.

By releasing new NAND memory chip generations on a 2-year cadence, SK Hynix is looking to solidify its technological leadership in the NAND space and promises to pursue innovation to meet the ever-increasing requirements of the AI era.

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