Of late, plenty of rumours about the Qualcomm Snapdragon 8 Gen 3 have surfaced online. The next-gen mobile AP will be launched earlier in the year, much like its predecessor. However, its core configuration is hotly contested, with one leaker stating it will retain the Snapdragon 8 Gen 2's 1+4+3 layout. At the same time, the latest one from Weibo suggests it will axe yet another efficiency core for a performance core in a 1+5+2 configuration.
Spotted by Twitter leaker Revegnus, the Snapdragon 8 Gen 3 is now rumoured to feature one Cortex-X4 core running at 3.2 GHz. That figure is likely incorrect, as a previous leak said it could go as high as 3.75 GHz. Its five Cortex-A720 cores will be clocked at 3.0 GHz and two Cortex-A520 cores at 2.0 GHz. This is far more likely, as the Snapdragon 8 Gen 3 will require all the performance cores it can get to achieve 1,930/6,236 points in Geekbench's single and multi-core tests, as foretold by another leak.
Other Snapdragon 8 Gen 3 specs include UFS 4.1 memory, LPDDR5 7,500 MT/s RAM, an Adreno 750 GPU and a Qualcomm X75 5G modem. The leaker (and many others) insist the Snapdragon 8 Gen 3 will be manufactured on TSMC's N4P process node, implying three generations of Qualcomm flagships will be stuck on what is effectively different versions of TSMC's N5 node.
Furthermore, the massive performance gains highlighted above will take a bit more than just a marginal node improvement. This leaves us with two possibilities- first, the Snapdragon 8 Gen 3 is actually a 3 nm chip manufactured on either Samsung or TSMC's cutting-edge node. Otherwise, if it is N4P-based, the leaked Geekbench score is vastly inflated, and its real-world performance gains could be a lot less significant.
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