Samsung begins mass production of second generation 10 nm DDR4 memory
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Samsung Electronics is now enforcing its dominant position in the flash memory market by starting to mass produce the industry's first second-generation 10 nm, 8 Gb DDR4 memory chips. This happens less than two years since the introduction of the first-generation DRAM products based on the 10 nm technology, which occurred in February 2016.
According to the official press release, the new 8 Gb DDR4 targets a wide range of next-gen systems and provides "the highest performance and energy efficiency for an 8 Gb DRAM chip, as well as the smallest dimensions." When compared to its predecessor, the new 10 nm memory is about 30 percent faster and uses about 10 to 15 percent less power. While the first-generation 10 nm 8 Gb DDR4 memory operates at 3,200 Mbps per pin, its successor provides a speed of 3,600 Mbps per pin.
Thanks to the advancements of the new chip that is now in the mass production stage, Samsung can already look ahead and accelerate its plans for the introduction of next-generation DRAM chips and systems for use in enterprise servers and supercomputers, but also for mobile devices and HPC systems. The list of these chips and systems includes DDR5 and LPDDR5, HBM3, and GDDR6.
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