Micron unveils the world’s first 512GB DDR5 memory module

Micron has demonstrated what it describes as the world’s first 512GB DDR5 RDIMM, a high-capacity server memory module built for AI, database, analytics and simulation workloads. The company says the module will offer speeds of up to 9,200 MT/s, while consuming more than 60 % less power than an equivalent configuration using currently available modules.

The 512GB capacity is enabled by vertically stacked DRAM dies connected with through-silicon vias (TSVs). Micron says that technology could allow a dual-socket server with 24 memory slots to reach up to 12TB of DDR5 memory.

Micron also claims the larger module could substantially improve server efficiency. One 512GB RDIMM is rated at 16W, compared with 44.2W for four 128GB modules that provide the same total capacity — a reduction in operating power of more than 60 %, according to the company.

Extra capacity matters for workloads that need to keep huge datasets in memory rather than moving them to slower storage. Micron specifically highlights large language models, AI inference, in-memory databases, caching services, high-core-count CPU systems and virtualized infrastructure.

Micron also claims performance benefits for memory-bound workloads. In Spark SVM-based data analytics, 512GB RDIMMs can deliver up to 1.4 times the performance of systems using 256GB DDR5 configurations. The company also expects benefits for platforms such as RocksDB and Redis, including higher throughput and improved concurrency, though actual performance will depend on the workload and server hardware

Micron expects its 512GB DDR5 RDIMMs to enter volume production in the second half of 2027, depending on customer demand. AMD and Intel are both currently validating the 512GB RDIMM for their next-generation server platforms.