Mediatek Helio G35 vs Qualcomm Snapdragon 410 MSM8916 vs Mediatek Helio G37

Mediatek Helio G35

The Mediatek Helio G35 is an entry level ARM SoC for smartphones (mainly Android based) that was introduced in late 2020. It is manufactured in a 12 nm FinFET process and is equipped with 8 ARM Cortex-A53 CPU cores clocked at up to 2.3 GHz. Compared to the similar Helio G25, the G35 offers higher CPU clock speeds (+ 300 MHz), GPU clock speeds (+30 MHz) and supports higher display resolutions of up to 2400 x 1800.

Furthermore, the SoC integrates a LTE Cat.4 modem, a Wi-Fi 5 / Bluetooth 5.0 modem, a LPDDR3-933 / LPDDR4-1200 / LPDDR4x-1600 memory controller, a IMG PowerVR GE8320 graphics card, and a 1080p30 video de- and encoder (H.265 decoding, H.264 encoding).

Qualcomm Snapdragon 410 MSM8916

The Qualcomm Snapdragon 410 (MSM8916) is a ARM based mid-range SoC for tablets and smartphones (mostly Android based). It was announced in Dec. 2013 and was the first 64-Bit SoC by Qualcomm. It integrates four ARM Cortex-A53 (quad-core) processor cores, a Adreno 306 graphics card, a 64 Bit LPDDR2/3 memory controller and WLAN, Bluetooth, and UMTS/LTE radio.

Mediatek Helio G37

The Mediatek Helio G37 is an entry level ARM SoC for smartphones (mainly Android based) that was introduced in late 2020. It is manufactured in a 12 nm FinFET process and is equipped with 8 ARM Cortex-A53 CPU cores clocked at up to 2.3 GHz. They are divided in two clusters, with the four efficiency cores only clock up to 1.8 GHz. Compared to the similar Helio G35, the G37 offers support for 90 Hz displays and 8 GB RAM.

The performance of the G37 is positioned in the entry level and especially the single core performance is very slow due to the small A53 cores and no big performance cores.

Furthermore, the SoC integrates a LTE Cat.4 modem, a Wi-Fi 5 / Bluetooth 5.0 modem, a LPDDR3-933 / LPDDR4-1200 / LPDDR4x-1600 memory controller, a IMG PowerVR GE8320 graphics card, and a 1080p30 video de- and encoder (H.265 decoding, H.264 encoding).

The G37 is produced in 12nm FinFET.