SK Hynix announces state-of-the-art HBM3-based DRAM

SK Hynix has launched its latest in the high-bandwidth memory typically pitched at demanding and high-performance use-cases such as AI, machine-learning, top-end graphics and general datacenter needs. Despite its name, HBM3 is accounted as the fourth generation of its standard, representing an upgrade on HBM2E, which was an improvement on HBM2 in turn.

Its South Korean manufacturer asserts that it will make for the most powerful DRAM on Earth on its release. This is due to its new top data-processing rate of 819 gigabytes per second (GB/s), or up to 78% faster than HBM2E, and might allow a user to transmit as many as 163 video files of 5GB in size each in just 1 second.

SK Hynix has also confirmed that it will offer its HBM3 DRAM with 24GB in capacity, as well as the 16GB maximum of HBM2E. This new top-end size has been achieved thanks to the latest breakthroughs in chip production, by which chip height has been refined down to just 30 micrometers (μm), which allows the company to stack 12 chips (as opposed to 8 for HBM2E) vertically to give a single 24GB stack.

HBM3 by SK Hynix still awaits availability and pricing data. Nevertheless, its manufacturer projects that it will be in high demand among buyers involved in supercomputing of all kinds when it is ready to ship. Seon-yong Cha, Executive Vice President of DRAM development within this company, indicated that this next-gen HBM will "solidify our leadership in the premium memory market”.

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