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The 3nm race is on: Samsung allegedly invests US$10 billion in Austin, TX semiconductor facility

Samsung's move could mean that 3nm GaaFET chips make it to market by 2024 (Image source: Samsung)
Samsung's move could mean that 3nm GaaFET chips make it to market by 2024 (Image source: Samsung)
As TSMC pushes ahead with their plans for 3nm FinFET lithography, Samsung's reportedly investing over US$10 billion in an Austin, TX facility to take their own 3nm manufacturing strategy forward.

According to an ITHome report, Samsung is apparently planning on investing over US$10 billion in a new semiconductor chip manufacturing facility in Texas. The report claims that Samsung hopes to win new US customers on account of this new Made in America facility. 

Production timelines remain unclear. However, ITHome sources hint that operations would only start by 2023 at the earliest. This could mean that we'll have to wait til 2024 or 2025 to see actual Samsung 3nm EUV chips in shipping devices.

Samsung's move is reportedly down to worries about the progress rival TSMC has been making on 3nm. Unlike Samsung, which is planning on leveraging GaaFET (Gate-all-around FET) technology, TSMC is sticking to tried and true FinFET tech: it'll be interesting to see how FinFET works at 3nm, and the extent to which TSMC's modifications will mitigate quantum tunneling and other effects. 

Samsung's chips may hit the market slightly later, but GaaFET has the potential to offer superior thermals and power efficiency.  

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> Notebook / Laptop Reviews and News > News > News Archive > Newsarchive 2021 01 > The 3nm race is on: Samsung allegedly invests US$10 billion in Austin, TX semiconductor facility
Arjun Krishna Lal, 2021-01-23 (Update: 2021-01-23)