HiSilicon Kirin 658 vs MediaTek MT8163 V/B 1.3 GHz vs HiSilicon Kirin 620

HiSilicon Kirin 658

The HiSilicon Kirin 658 is an ARM-based octa-core SoC for mid-range smartphones and tablets. It was announced early 2017 and features eight ARM Cortex-A53 cores. Four cores can be clocked with up to 1.7 GHz (power saving cores) and four with up to 2.35 GHz (performance cores). The difference to the older Kirin 650 and Kirin 655 SoCs is the higher clock speed of the performance cores (2.35 versus 2.1 and 2.0 GHz).

Furthermore, a ARM Mali-T830 MP2 graphics card (at 900 MHz with 40.8 GFLOPS), a 64-Bit LPDDR3 memory controller and a dual-sim capable LTE Cat. 6 (max. 300 MBit/s and GSM, WCDMA, UMTS, HSPA+) radio are integrated in the SoC. The processor performance can be compared with the older Kirin 930 and therefore sufficient for daily usage as browsing and non demanding apps. High-end SoCs with Cortex-A57 or A72 cores however should be noticeably faster. The SoC is produced in a modern 16nm FinFET process and is therefore very power efficient.

MediaTek MT8163 V/B 1.3 GHz

The MediaTek MT8163 V/B is an ARM based entry-level to mid-range SoC for (Android based) tablets. It offers four ARM Cortex-A53 processor cores (quad-core) that are clocked with up to 1.3 GHz. Furthermore, an ARM Mali-T720 MP2 graphics card clocked at 520 MHz, a DDR3x32 1600Mbps memory controller, Bluetooth 4.0, 802.11 b/g/n, GPS and FM are integrated in the SoC.

The similar named MediaTek MT8163 V/A is the faster version, with a CPU clock o up to 1.5 GHz and GPU of up to 600 MHz.

The performance is situated in the entry level of 2015 and often similar to the Kirin 910T (see benchmark below).

HiSilicon Kirin 620

The HiSilicon Kirin 620 is an ARM-based octa core SoC for mid-range smartphones. It was announced at the end of 2014 and features eight ARM Cortex-A53 cores at 1.2 GHz (max.). Furthermore, the processor integrates a ARM Mali-450 MP4 graphics card, an LPDDR3 memory controller, an LTE Cat.4 modem, 802.11n WiFi and Bluetooth 4.0. The chip is manufactured in 28nm and relatively power efficient.